2SB1732TL
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- Mfr.Part #
- 2SB1732TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 12V 1.5A TUMT3
- Stock
- 13,137
- In Stock ：
- 13,137
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 25mA, 500mA
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -85mV
- Continuous Collector Current :
- -1.5A
- Height :
- 820μm
- Pbfree Code :
- yes
- Length :
- 2.1mm
- Max Collector Current :
- 1.5A
- Published :
- 2007
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mounting Type :
- Surface Mount
- Width :
- 1.8mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Factory Lead Time :
- 13 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 12V
- Terminal Position :
- Dual
- Max Power Dissipation :
- 400mW
- Max Breakdown Voltage :
- 12V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e2
- Radiation Hardening :
- No
- hFE Min :
- 270
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- -15V
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Frequency :
- 100MHz
- Base Part Number :
- 2SB1732
- Number of Terminations :
- 3
- Contact Plating :
- Copper, Tin
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 12V
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -6V
- Transition Frequency :
- 400MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Package / Case :
- 3-SMD, Flat Lead
- Gain Bandwidth Product :
- 400MHz
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SB1732TL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
2SB1732TL Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 200mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -85mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 25mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at -1.5A in order to achieve high efficiency.The emitter base voltage can be kept at -6V for high efficiency.The part has a transition frequency of 400MHz.The breakdown input voltage is 12V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
2SB1732TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -85mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 400MHz
2SB1732TL Applications
There are a lot of ROHM Semiconductor
2SB1732TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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