2SB1730TL
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- Mfr.Part #
- 2SB1730TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 12V 2A TUMT3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 12V
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 50mA, 1A
- Published :
- 2007
- Transition Frequency :
- 360MHz
- Base Part Number :
- 2SB1730
- Radiation Hardening :
- No
- Contact Plating :
- Copper, Tin
- JESD-609 Code :
- e2
- Power Dissipation :
- 400mW
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- hFE Min :
- 270
- Max Collector Current :
- 2A
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 13 Weeks
- Voltage - Rated DC :
- -12V
- Current Rating :
- -2A
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 10
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 12V
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 360MHz
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 360MHz
- Collector Base Voltage (VCBO) :
- 15V
- Max Power Dissipation :
- 400mW
- Package / Case :
- 3-SMD, Flat Lead
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 12V
- Terminal Finish :
- TIN COPPER
- Datasheets
- 2SB1730TL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
2SB1730TL Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 180mV @ 50mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).360MHz is present in the transition frequency.An input voltage of 12V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
2SB1730TL Features
the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is -2A
a transition frequency of 360MHz
2SB1730TL Applications
There are a lot of ROHM Semiconductor
2SB1730TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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