2SB1710TL
- Mfr.Part #
- 2SB1710TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A TSMT3
- Stock
- 24,075
- In Stock :
- 24,075
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Type :
- PNP
- Package / Case :
- SC-96
- Emitter Base Voltage (VEBO) :
- -6V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- TIN SILVER COPPER
- Current Rating :
- -1A
- Width :
- 1.8mm
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Collector Emitter Saturation Voltage :
- -150mV
- Height :
- 950μm
- Terminal Position :
- Dual
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- Max Frequency :
- 100MHz
- Factory Lead Time :
- 20 Weeks
- Voltage - Rated DC :
- -30V
- Terminal Form :
- Gull wing
- hFE Min :
- 270
- Max Power Dissipation :
- 500mW
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 320MHz
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- AMPLIFIER
- Contact Plating :
- Copper, Silver, Tin
- Gain Bandwidth Product :
- 320MHz
- Published :
- 2003
- Collector Base Voltage (VCBO) :
- -30V
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Element Configuration :
- Single
- Length :
- 3mm
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Max Collector Current :
- 1A
- Continuous Collector Current :
- -1A
- Base Part Number :
- 2SB1710
- Datasheets
- 2SB1710TL

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-96 Tape & Reel (TR) Surface Mount
2SB1710TL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 25mA, 500mA.Continuous collector voltages of -1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 320MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1A volts.
2SB1710TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 320MHz
2SB1710TL Applications
There are a lot of ROHM Semiconductor
2SB1710TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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