2SB1710TL
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- Mfr.Part #
- 2SB1710TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A TSMT3
- Stock
- 24,075
- In Stock ：
- 24,075
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Number of Pins :
- 3
- Published :
- 2003
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Factory Lead Time :
- 20 Weeks
- Max Collector Current :
- 1A
- Terminal Finish :
- TIN SILVER COPPER
- Contact Plating :
- Copper, Silver, Tin
- Length :
- 3mm
- Transition Frequency :
- 320MHz
- Element Configuration :
- Single
- Voltage - Rated DC :
- -30V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 320MHz
- Current Rating :
- -1A
- Emitter Base Voltage (VEBO) :
- -6V
- Base Part Number :
- 2SB1710
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 270
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 500mW
- Max Frequency :
- 100MHz
- Package / Case :
- SC-96
- Pin Count :
- 3
- Height :
- 950μm
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 30V
- JESD-609 Code :
- e1
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -150mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- -30V
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Width :
- 1.8mm
- Continuous Collector Current :
- -1A
- Mounting Type :
- Surface Mount
- Datasheets
- 2SB1710TL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-96 Tape & Reel (TR) Surface Mount
2SB1710TL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 25mA, 500mA.Continuous collector voltages of -1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 320MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1A volts.
2SB1710TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 320MHz
2SB1710TL Applications
There are a lot of ROHM Semiconductor
2SB1710TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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