2SB1706TL
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- Mfr.Part #
- 2SB1706TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS PNP 30V 2A TSMT3
- Stock
- 8,651
- In Stock ：
- 8,651
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Max Collector Current :
- 2A
- Max Power Dissipation :
- 500mW
- Radiation Hardening :
- No
- Base Part Number :
- 2SB1706
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 20 Weeks
- Current Rating :
- -2A
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 280MHz
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 75mA, 1.5A
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- JESD-609 Code :
- e1
- hFE Min :
- 270
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Element Configuration :
- Single
- Transition Frequency :
- 280MHz
- Power - Max :
- 500mW
- Package / Case :
- SC-96
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- -30V
- Collector Base Voltage (VCBO) :
- 30V
- Max Breakdown Voltage :
- 30V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Contact Plating :
- Copper, Silver, Tin
- Number of Elements :
- 1
- Datasheets
- 2SB1706TL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-96 Tape & Reel (TR) Surface Mount
2SB1706TL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 200mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 370mV @ 75mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 280MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.
2SB1706TL Features
the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is -2A
a transition frequency of 280MHz
2SB1706TL Applications
There are a lot of ROHM Semiconductor
2SB1706TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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