2SB1706TL
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- Mfr.Part #
- 2SB1706TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS PNP 30V 2A TSMT3
- Stock
- 8,651
- In Stock ：
- 8,651
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- 2SB1706
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- SC-96
- Power - Max :
- 500mW
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 280MHz
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -2A
- Contact Plating :
- Copper, Silver, Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Transistor Type :
- PNP
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Max Power Dissipation :
- 500mW
- Factory Lead Time :
- 20 Weeks
- Collector Base Voltage (VCBO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -30V
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 280MHz
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 75mA, 1.5A
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 30V
- Published :
- 2006
- Max Collector Current :
- 2A
- Collector Emitter Voltage (VCEO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- hFE Min :
- 270
- Datasheets
- 2SB1706TL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-96 Tape & Reel (TR) Surface Mount
2SB1706TL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 200mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 370mV @ 75mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 280MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.
2SB1706TL Features
the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is -2A
a transition frequency of 280MHz
2SB1706TL Applications
There are a lot of ROHM Semiconductor
2SB1706TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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