2SB1694T106
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- Mfr.Part #
- 2SB1694T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A UMT3
- Stock
- 14,819
- In Stock ：
- 14,819
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 320MHz
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 13 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 380mV @ 25mA, 500mA
- Length :
- 2.1mm
- Collector Emitter Saturation Voltage :
- -380mV
- JESD-609 Code :
- e1
- Base Part Number :
- 2SB1694
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Contact Plating :
- Copper, Silver, Tin
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Collector Current :
- 1A
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 320MHz
- hFE Min :
- 270
- Height :
- 900μm
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- -30V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- HTS Code :
- 8541.21.00.75
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Current Rating :
- -1A
- Voltage - Rated DC :
- -30V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Continuous Collector Current :
- -1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Element Configuration :
- Single
- Max Power Dissipation :
- 200mW
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Max Frequency :
- 100MHz
- Package / Case :
- SC-70, SOT-323
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- -6V
- Published :
- 2009
- Max Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.35mm
- Datasheets
- 2SB1694T106
2SB1694T106 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SB1694T106 Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -380mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 380mV @ 25mA, 500mA.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 320MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SB1694T106 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -380mV
the vce saturation(Max) is 380mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 320MHz
2SB1694T106 Applications
There are a lot of ROHM Semiconductor
2SB1694T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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