2SB1694T106
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- Mfr.Part #
- 2SB1694T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A UMT3
- Stock
- 14,819
- In Stock ：
- 14,819
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -30V
- Radiation Hardening :
- No
- Max Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 380mV @ 25mA, 500mA
- Gain Bandwidth Product :
- 320MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 320MHz
- Current Rating :
- -1A
- Collector Emitter Breakdown Voltage :
- 30V
- Pbfree Code :
- yes
- Continuous Collector Current :
- -1A
- Contact Plating :
- Copper, Silver, Tin
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Package / Case :
- SC-70, SOT-323
- Mounting Type :
- Surface Mount
- Length :
- 2.1mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 1A
- Number of Pins :
- 3
- Max Power Dissipation :
- 200mW
- Number of Elements :
- 1
- Published :
- 2009
- HTS Code :
- 8541.21.00.75
- Height :
- 900μm
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- 2SB1694
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 30V
- Emitter Base Voltage (VEBO) :
- -6V
- Width :
- 1.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -380mV
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 13 Weeks
- Transistor Type :
- PNP
- JESD-609 Code :
- e1
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- -30V
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 270
- Datasheets
- 2SB1694T106
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SB1694T106 Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -380mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 380mV @ 25mA, 500mA.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 320MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SB1694T106 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -380mV
the vce saturation(Max) is 380mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 320MHz
2SB1694T106 Applications
There are a lot of ROHM Semiconductor
2SB1694T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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