2SB1690KT146
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- Mfr.Part #
- 2SB1690KT146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 12V 2A SMT3
- Stock
- 6,013
- In Stock ：
- 6,013
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -15V
- Continuous Collector Current :
- -2A
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Height :
- 1mm
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 50mA, 1A
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Published :
- 2004
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 13 Weeks
- Operating Temperature :
- 150°C TJ
- Width :
- 1.6mm
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 12V
- Contact Plating :
- Copper, Silver, Tin
- Terminal Finish :
- TIN SILVER COPPER
- Transition Frequency :
- 360MHz
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 12V
- Number of Elements :
- 1
- Pin Count :
- 3
- Current Rating :
- -2A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 270
- Pbfree Code :
- yes
- Length :
- 2.9mm
- Collector Emitter Saturation Voltage :
- -120mV
- Polarity/Channel Type :
- PNP
- Base Part Number :
- 2SB1690
- Voltage - Rated DC :
- -12V
- Max Frequency :
- 100MHz
- JESD-609 Code :
- e1
- Max Collector Current :
- 2A
- HTS Code :
- 8541.21.00.75
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 360MHz
- Emitter Base Voltage (VEBO) :
- -6V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Datasheets
- 2SB1690KT146
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SB1690KT146 Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -120mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 180mV @ 50mA, 1A.A -2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 360MHz.Input voltage breakdown is available at 12V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SB1690KT146 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
a transition frequency of 360MHz
2SB1690KT146 Applications
There are a lot of ROHM Semiconductor
2SB1690KT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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