2SB1580T100
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- Mfr.Part #
- 2SB1580T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A MPT3
- Stock
- 25,274
- In Stock ：
- 25,274
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Contact Plating :
- Copper, Tin
- Terminal Form :
- Flat
- Published :
- 2004
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 8V
- Gain Bandwidth Product :
- 50MHz
- Case Connection :
- COLLECTOR
- Termination :
- SMD/SMT
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -100V
- Polarity :
- PNP
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- hFE Min :
- 1000
- Element Configuration :
- Single
- Package / Case :
- TO-243AA
- ECCN Code :
- EAR99
- Transition Frequency :
- 50MHz
- Max Collector Current :
- 2A
- Number of Pins :
- 3
- JESD-609 Code :
- e2
- Terminal Finish :
- TIN COPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- -100V
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 2V
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 100V
- Max Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- -2A
- Max Power Dissipation :
- 2W
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Power Dissipation :
- 2W
- Base Part Number :
- 2SB1580
- Number of Elements :
- 1
- Transistor Type :
- PNP - Darlington
- Datasheets
- 2SB1580T100
PNP - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
2SB1580T100 Overview
In this device, the DC current gain is 1000 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1mA, 1A.Maintaining the continuous collector voltage at -2A is essential for high efficiency.Keeping the emitter base voltage at 8V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).50MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
2SB1580T100 Features
the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is -2A
a transition frequency of 50MHz
2SB1580T100 Applications
There are a lot of ROHM Semiconductor
2SB1580T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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