2SB1565FU6E
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- Mfr.Part #
- 2SB1565FU6E
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A TO220FN
- Stock
- 44,812
- In Stock ：
- 44,812
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 15MHz
- Polarity :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- -3A
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Emitter Base Voltage (VEBO) :
- -7V
- Power - Max :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 200mA, 2A
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Gain Bandwidth Product :
- 15MHz
- Collector Base Voltage (VCBO) :
- -60V
- Collector Emitter Saturation Voltage :
- -1.5V
- Published :
- 2005
- hFE Min :
- 100
- Supplier Device Package :
- TO-220FN
- Max Operating Temperature :
- 150°C
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Max Power Dissipation :
- 2W
- Min Operating Temperature :
- -55°C
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 3A
- Element Configuration :
- Single
- Mount :
- Through Hole
- Max Collector Current :
- 3A
- Package / Case :
- TO-220-3 Full Pack
- Datasheets
- 2SB1565FU6E
PNP 150°C TJ 10μA ICBO TO-220-3 Full Pack Bulk Through Hole
2SB1565FU6E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 200mA, 2A.Continuous collector voltages of -3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.TO-220FN is the supplier device package for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 3A volts.
2SB1565FU6E Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 200mA, 2A
the emitter base voltage is kept at -7V
the supplier device package of TO-220FN
2SB1565FU6E Applications
There are a lot of ROHM Semiconductor
2SB1565FU6E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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