2SB1560
- Mfr.Part #
- 2SB1560
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 150V 10A TO3P
- Stock
- 8,089
- In Stock :
- 8,089
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temp Range :
- -55C to 150C
- Configuration :
- Single
- Base-Emitter Saturation Voltage (Max) :
- 3(V)
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Package Type :
- TO-3P
- Transistor Type :
- PNP - Darlington
- Packaging :
- Bulk
- Package :
- Bulk
- Emitter-Base Voltage :
- 5(V)
- Operating Temperature Classification :
- Military
- Published :
- 1999
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Pin Count :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 7mA, 7A
- Frequency - Transition :
- 50MHz
- Mounting :
- Through Hole
- Number of Pins :
- 3
- Power Dissipation :
- 100W
- Maximum Collector Cut-off Current :
- 100
- Qualification Status :
- Not Qualified
- Series :
- -
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- AMPLIFIER
- Collector Current (DC) :
- 10(A)
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5000 @ 7A 4V
- Current - Collector (Ic) (Max) :
- 10A
- Surface Mount :
- No
- Rad Hardened :
- No
- Product Status :
- Active
- Transition Frequency :
- 50MHz
- Polarity :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Additional Feature :
- BUILT IN BIAS RESISTOR
- Collector-Emitter Voltage :
- 150(V)
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-3P
- Collector-Base Voltage :
- 160(V)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 24 Weeks
- Mounting Type :
- Through Hole
- Power - Max :
- 100 W
- Package / Case :
- TO-3P-3, SC-65-3
- Datasheets
- 2SB1560

PNP - Darlington 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON TO-3P-3, SC-65-3 Bulk Through Hole
2SB1560 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5000 @ 7A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 7mA, 7A.A transition frequency of 50MHz is present in the part.The product comes in the supplier device package of TO-3P.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.
2SB1560 Features
the DC current gain for this device is 5000 @ 7A 4V
the vce saturation(Max) is 2.5V @ 7mA, 7A
a transition frequency of 50MHz
the supplier device package of TO-3P
2SB1560 Applications
There are a lot of Sanken
2SB1560 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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