2SB1495,Q(M
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- Mfr.Part #
- 2SB1495,Q(M
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A TO220NIS
- Stock
- 46,511
- In Stock ：
- 46,511
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1.5mA, 1.5A
- Transistor Type :
- PNP
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 3A
- Package / Case :
- TO-220-3 Full Pack
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-220NIS
- Power - Max :
- 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 2A 2V
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Published :
- 2007
- Datasheets
- 2SB1495,Q(M
PNP 150°C TJ 10μA ICBO TO-220-3 Full Pack Bulk Through Hole
2SB1495,Q(M Overview
In this device, the DC current gain is 2000 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1.5mA, 1.5A.Product comes in the supplier's device package TO-220NIS.There is a 100V maximal voltage in the device due to collector-emitter breakdown.
2SB1495,Q(M Features
the DC current gain for this device is 2000 @ 2A 2V
the vce saturation(Max) is 1.5V @ 1.5mA, 1.5A
the supplier device package of TO-220NIS
2SB1495,Q(M Applications
There are a lot of Toshiba Semiconductor and Storage
2SB1495,Q(M applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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