2SB1427T100E
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- Mfr.Part #
- 2SB1427T100E
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A MPT3
- Stock
- 7,759
- In Stock ：
- 7,759
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Copper, Tin
- Transition Frequency :
- 90MHz
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 20V
- Collector Base Voltage (VCBO) :
- -20V
- Max Collector Current :
- 2A
- HTS Code :
- 8541.21.00.95
- Case Connection :
- COLLECTOR
- Published :
- 1998
- hFE Min :
- 390
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Transistor Type :
- PNP
- Max Power Dissipation :
- 2W
- Terminal Form :
- Flat
- Continuous Collector Current :
- -2A
- Current Rating :
- -2A
- Package / Case :
- TO-243AA
- Gain Bandwidth Product :
- 90MHz
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Height :
- 1.5mm
- Transistor Application :
- AMPLIFIER
- VCEsat-Max :
- 0.5 V
- Pin Count :
- 3
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Collector Emitter Breakdown Voltage :
- 20V
- Width :
- 2.5mm
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 20V
- JESD-609 Code :
- e2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 390 @ 500mA 6V
- Radiation Hardening :
- No
- Factory Lead Time :
- 13 Weeks
- Emitter Base Voltage (VEBO) :
- -6V
- Collector Emitter Saturation Voltage :
- -500mV
- Voltage - Rated DC :
- -20V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Max Frequency :
- 100MHz
- Length :
- 4.5mm
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Base Part Number :
- 2SB1427
- Datasheets
- 2SB1427T100E
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1427T100E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 390 @ 500mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.The emitter base voltage can be kept at -6V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 90MHz.The breakdown input voltage is 20V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2SB1427T100E Features
the DC current gain for this device is 390 @ 500mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -2A
a transition frequency of 90MHz
2SB1427T100E Applications
There are a lot of ROHM Semiconductor
2SB1427T100E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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