2SB1412TLR

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Mfr.Part #
2SB1412TLR
Manufacturer
ROHM Semiconductor
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 20V 5A CPT3
Stock
15,201
In Stock :
15,201

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
1W
Max Breakdown Voltage :
20V
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
10
Collector Emitter Voltage (VCEO) :
20V
Base Part Number :
2SB1412
Mount :
Surface Mount
Number of Elements :
1
Radiation Hardening :
No
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 500mA 2V
Polarity/Channel Type :
PNP
Number of Terminations :
2
Current Rating :
-5A
Emitter Base Voltage (VEBO) :
-6V
Gain Bandwidth Product :
120MHz
Contact Plating :
Copper, Tin
Voltage - Rated DC :
-20V
Max Collector Current :
5A
Transistor Type :
PNP
Mounting Type :
Surface Mount
Collector Base Voltage (VCBO) :
30V
Operating Temperature :
150°C TJ
Transition Frequency :
120MHz
Pin Count :
3
Terminal Finish :
Tin/Copper (Sn98Cu2)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2004
Collector Emitter Breakdown Voltage :
20V
JESD-30 Code :
R-PSSO-G2
JESD-609 Code :
e2
Lead Free :
Lead Free
Max Power Dissipation :
1W
Element Configuration :
Single
Continuous Collector Current :
-5A
Current - Collector Cutoff (Max) :
500nA ICBO
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Number of Pins :
3
ECCN Code :
EAR99
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Collector Emitter Saturation Voltage :
350mV
Frequency :
120MHz
Vce Saturation (Max) @ Ib, Ic :
1V @ 100mA, 4A
hFE Min :
82
Datasheets
2SB1412TLR
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SB1412TLR from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2SB1412, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, 2SB1412TLR pinout, 2SB1412TLR datasheet PDF, 2SB1412TLR amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SB1412TLR ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SB1412TLR


PNP 150°C TJ 500nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

2SB1412TLR Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -5A.Keeping the emitter base voltage at -6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 120MHz in the part.Single BJT transistor can be broken down at a voltage of 20V volts.When collector current reaches its maximum, it can reach 5A volts.

2SB1412TLR Features


the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at -6V
the current rating of this device is -5A
a transition frequency of 120MHz


2SB1412TLR Applications


There are a lot of ROHM Semiconductor
2SB1412TLR applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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