2SB1386T100Q
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- Mfr.Part #
- 2SB1386T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 5A MPT3
- Stock
- 8,458
- In Stock ：
- 8,458
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- 2SB1386
- Max Breakdown Voltage :
- 20V
- VCEsat-Max :
- 1 V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 4A
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- hFE Min :
- 82
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 500mW
- Emitter Base Voltage (VEBO) :
- -6V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- TO-243AA
- Mount :
- Surface Mount
- Published :
- 2001
- Terminal Finish :
- TIN COPPER
- HTS Code :
- 8541.21.00.75
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 500mW
- Power - Max :
- 2W
- Current Rating :
- -5A
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e2
- Max Collector Current :
- 5A
- Voltage - Rated DC :
- -20V
- Number of Terminations :
- 3
- Factory Lead Time :
- 10 Weeks
- Terminal Form :
- Flat
- Collector Emitter Voltage (VCEO) :
- 1V
- Mounting Type :
- Surface Mount
- Termination :
- SMD/SMT
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 20V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 120MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- -30V
- Transition Frequency :
- 120MHz
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Contact Plating :
- Copper, Tin
- Datasheets
- 2SB1386T100Q
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1386T100Q Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100mA, 4A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.A transition frequency of 120MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 5A volts at its maximum.
2SB1386T100Q Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at -6V
the current rating of this device is -5A
a transition frequency of 120MHz
2SB1386T100Q Applications
There are a lot of ROHM Semiconductor
2SB1386T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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