2SB1375,CLARIONF(M

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Mfr.Part #
2SB1375,CLARIONF(M
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS PNP 60V 3A TO220NIS
Stock
23,296
In Stock :
23,296

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency - Transition :
9MHz
Current - Collector (Ic) (Max) :
3A
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 500mA 5V
Supplier Device Package :
TO-220NIS
Voltage - Collector Emitter Breakdown (Max) :
60V
Operating Temperature :
150°C TJ
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 200mA, 2A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
2W
Published :
2007
Packaging :
Bulk
Package / Case :
TO-220-3 Full Pack
Current - Collector Cutoff (Max) :
10μA ICBO
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SB1375,CLARIONF(M from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-220-3 Full Pack, 2SB1375,CLARIONF(M pinout, 2SB1375,CLARIONF(M datasheet PDF, 2SB1375,CLARIONF(M amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SB1375,CLARIONF(M ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SB1375,CLARIONF(M


PNP 150°C TJ 10μA ICBO TO-220-3 Full Pack Bulk Through Hole

2SB1375,CLARIONF(M Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 200mA, 2A.The product comes in the supplier device package of TO-220NIS.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.

2SB1375,CLARIONF(M Features


the DC current gain for this device is 100 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 200mA, 2A
the supplier device package of TO-220NIS


2SB1375,CLARIONF(M Applications


There are a lot of Toshiba Semiconductor and Storage
2SB1375,CLARIONF(M applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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