2SB1326TV2R

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Mfr.Part #
2SB1326TV2R
Manufacturer
ROHM Semiconductor
Package / Case
3-SIP
Datasheet
Download
Description
TRANS PNP 20V 5A ATV
Stock
13,198
In Stock :
13,198

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
1W
Packaging :
Tape and Box (TB)
Collector Emitter Voltage (VCEO) :
1V
Pin Count :
3
JESD-609 Code :
e1
Base Part Number :
2SB1326
Voltage - Rated DC :
-20V
Operating Temperature :
150°C TJ
Collector Base Voltage (VCBO) :
-20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
20V
Terminal Finish :
TIN SILVER COPPER
Time@Peak Reflow Temperature-Max (s) :
10
Transition Frequency :
120MHz
ECCN Code :
EAR99
Number of Elements :
1
Current - Collector Cutoff (Max) :
500nA ICBO
Mounting Type :
Through Hole
Max Breakdown Voltage :
20V
Power - Max :
1W
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Published :
2004
Emitter Base Voltage (VEBO) :
6V
hFE Min :
180
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 500mA 2V
Mount :
Through Hole
Lead Free :
Lead Free
Package / Case :
3-SIP
Qualification Status :
Not Qualified
Polarity/Channel Type :
PNP
Transistor Type :
PNP
JESD-30 Code :
R-PSIP-T3
Vce Saturation (Max) @ Ib, Ic :
1V @ 100mA, 4A
Max Collector Current :
5A
Current Rating :
-5A
Transistor Application :
SWITCHING
Gain Bandwidth Product :
120MHz
Datasheets
2SB1326TV2R
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SB1326TV2R from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2SB1326, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:3-SIP, 2SB1326TV2R pinout, 2SB1326TV2R datasheet PDF, 2SB1326TV2R amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SB1326TV2R ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SB1326TV2R


PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP 3-SIP Tape & Box (TB) Through Hole

2SB1326TV2R Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 500mA 2V.When VCE saturation is 1V @ 100mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -5A.In the part, the transition frequency is 120MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 5A volts can be achieved.

2SB1326TV2R Features


the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 120MHz


2SB1326TV2R Applications


There are a lot of ROHM Semiconductor
2SB1326TV2R applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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