2SB1308T100Q
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- Mfr.Part #
- 2SB1308T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 3A MPT3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Base Voltage (VCBO) :
- -50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Polarity/Channel Type :
- PNP
- Continuous Collector Current :
- -3A
- Gain Bandwidth Product :
- 120MHz
- JESD-30 Code :
- R-PSSO-F3
- Collector Emitter Breakdown Voltage :
- 20V
- Collector Emitter Voltage (VCEO) :
- 20V
- Base Part Number :
- 2SB1308
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 150mA, 1.5A
- Transistor Type :
- PNP
- JESD-609 Code :
- e2
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Published :
- 1998
- hFE Min :
- 120
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Contact Plating :
- Copper, Tin
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -20V
- Current Rating :
- -3A
- Pbfree Code :
- yes
- Current - Collector (Ic) (Max) :
- 3A
- Terminal Finish :
- TIN COPPER
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Number of Elements :
- 1
- Package / Case :
- TO-243AA
- Max Power Dissipation :
- 2W
- Max Collector Current :
- 3A
- Terminal Form :
- Flat
- Datasheets
- 2SB1308T100Q
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1308T100Q Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 2V.When VCE saturation is 450mV @ 150mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -3A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.A maximum collector current of 3A volts can be achieved.
2SB1308T100Q Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 450mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is -3A
2SB1308T100Q Applications
There are a lot of ROHM Semiconductor
2SB1308T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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