2SB1302S-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Published :

2010

Transistor Application :

SWITCHING

hFE Min :

140

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e6

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA ICBO

Current - Collector (Ic) (Max) :

5A

Emitter Base Voltage (VEBO) :

-5V

Max Collector Current :

5A

Transistor Element Material :

SILICON

Width :

2.5mm

Pin Count :

3

Surface Mount :

yes

Height :

1.5mm

Collector Emitter Voltage (VCEO) :

10V

Element Configuration :

Single

Number of Elements :

1

Max Power Dissipation :

1.3W

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

-250mV

Terminal Form :

Flat

ECCN Code :

EAR99

Package / Case :

TO-243AA

Gain Bandwidth Product :

320MHz

Max Frequency :

320MHz

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Number of Terminations :

3

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Transistor Type :

PNP

Transition Frequency :

320MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 60mA, 3A

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

20V

Polarity/Channel Type :

PNP

Length :

4.5mm

Operating Temperature :

150°C TJ

Factory Lead Time :

2 Weeks

Collector Base Voltage (VCBO) :

-25V

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Case Connection :

COLLECTOR