2SB1302S-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Surface Mount :

yes

Max Frequency :

320MHz

Factory Lead Time :

2 Weeks

Transistor Element Material :

SILICON

Height :

1.5mm

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

-25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2.5mm

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Gain Bandwidth Product :

320MHz

Collector Emitter Saturation Voltage :

-250mV

JESD-609 Code :

e6

Pin Count :

3

Element Configuration :

Single

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Max Power Dissipation :

1.3W

Collector Emitter Breakdown Voltage :

20V

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Length :

4.5mm

Current - Collector Cutoff (Max) :

500nA ICBO

Package / Case :

TO-243AA

RoHS Status :

ROHS3 Compliant

Current - Collector (Ic) (Max) :

5A

Collector Emitter Voltage (VCEO) :

10V

Polarity/Channel Type :

PNP

Case Connection :

COLLECTOR

Transistor Type :

PNP

Transition Frequency :

320MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Emitter Base Voltage (VEBO) :

-5V

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 60mA, 3A

Max Collector Current :

5A

Published :

2010

Pbfree Code :

yes

Number of Pins :

3

Terminal Form :

Flat

Number of Elements :

1

hFE Min :

140