2SB1275TLP
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- Mfr.Part #
- 2SB1275TLP
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A CPT3
- Stock
- 2,988
- In Stock ：
- 2,988
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Current Rating :
- -1.5A
- Transistor Type :
- PNP
- Base Part Number :
- 2SB1275
- Collector Emitter Saturation Voltage :
- -2V
- Power - Max :
- 10W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 100mA 5V
- hFE Min :
- 82
- Pin Count :
- 3
- Number of Terminations :
- 2
- Factory Lead Time :
- 20 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1.5A
- JESD-609 Code :
- e2
- Gain Bandwidth Product :
- 50MHz
- Published :
- 2009
- Continuous Collector Current :
- -1.5A
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Breakdown Voltage :
- 160V
- Collector Emitter Breakdown Voltage :
- 160V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -160V
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- -160V
- Max Power Dissipation :
- 10W
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Contact Plating :
- Copper, Tin
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 2V
- Emitter Base Voltage (VEBO) :
- -5V
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 100mA, 1A
- Transition Frequency :
- 50MHz
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Datasheets
- 2SB1275TLP
PNP 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1275TLP Overview
This device has a DC current gain of 82 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -2V.A VCE saturation (Max) of 2V @ 100mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -1.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 1.5A volts is possible.
2SB1275TLP Features
the DC current gain for this device is 82 @ 100mA 5V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
2SB1275TLP Applications
There are a lot of ROHM Semiconductor
2SB1275TLP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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