2SB1275TLP
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- Mfr.Part #
- 2SB1275TLP
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A CPT3
- Stock
- 2,988
- In Stock ：
- 2,988
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Operating Temperature :
- 150°C TJ
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Base Part Number :
- 2SB1275
- Collector Emitter Saturation Voltage :
- -2V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 100mA 5V
- Collector Emitter Breakdown Voltage :
- 160V
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current Rating :
- -1.5A
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 160V
- Power - Max :
- 10W
- Max Collector Current :
- 1.5A
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- -160V
- Emitter Base Voltage (VEBO) :
- -5V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- -160V
- Pbfree Code :
- yes
- hFE Min :
- 82
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Continuous Collector Current :
- -1.5A
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Contact Plating :
- Copper, Tin
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 100mA, 1A
- Factory Lead Time :
- 20 Weeks
- Transition Frequency :
- 50MHz
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Voltage (VCEO) :
- 2V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e2
- Max Power Dissipation :
- 10W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gain Bandwidth Product :
- 50MHz
- Datasheets
- 2SB1275TLP
2SB1275TLP Documents
PNP 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1275TLP Overview
This device has a DC current gain of 82 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -2V.A VCE saturation (Max) of 2V @ 100mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -1.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 1.5A volts is possible.
2SB1275TLP Features
the DC current gain for this device is 82 @ 100mA 5V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
2SB1275TLP Applications
There are a lot of ROHM Semiconductor
2SB1275TLP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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