2SB1258

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency - Transition :

100MHz

Number of Terminations :

3

Transistor Application :

SWITCHING

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

1.5V

Series :

-

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Current - Collector Cutoff (Max) :

10μA ICBO

Published :

2007

Pin Count :

3

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Terminal Position :

Single

Polarity/Channel Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 6mA, 3A

Factory Lead Time :

12 Weeks

Other Names :

2SB1258 DK

Collector Emitter Breakdown Voltage :

100V

Product Status :

Obsolete

Transistor Type :

PNP - Darlington

Current - Collector (Ic) (Max) :

6A

Packaging :

Bulk

Transition Frequency :

100MHz

Power - Max :

30W

Mounting Type :

Through Hole

Supplier Device Package :

TO-220F

Package / Case :

TO-220-3 Full Pack

Max Collector Current :

6A

Transistor Element Material :

SILICON

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 2V

Voltage - Collector Emitter Breakdown (Max) :

100V

RoHS Status :

RoHS Compliant

Max Power Dissipation :

30W

Lead Free :

Lead Free

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 0.033

Qualification Status :

Not Qualified

Package :

Bulk

Operating Temperature :

150°C TJ

Case Connection :

Isolated