2SB1258
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- Mfr.Part #
- 2SB1258
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANSISTOR PNP DARL TO220
- Stock
- 8,183
- In Stock ：
- 8,183
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Packaging :
- Bulk
- Product Status :
- Obsolete
- Case Connection :
- Isolated
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 2V
- Number of Elements :
- 1
- Supplier Device Package :
- TO-220F
- Max Power Dissipation :
- 30W
- Collector Emitter Breakdown Voltage :
- 100V
- RoHS Status :
- RoHS Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Max Collector Current :
- 6A
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Power - Max :
- 30W
- JESD-30 Code :
- R-PSFM-T3
- Series :
- -
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Other Names :
- 2SB1258 DK
- Package :
- Bulk
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Factory Lead Time :
- 12 Weeks
- Current - Collector (Ic) (Max) :
- 6A
- Terminal Position :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 6mA, 3A
- Transition Frequency :
- 100MHz
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Configuration :
- Single
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Transistor Type :
- PNP - Darlington
- Polarity/Channel Type :
- PNP
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 0.033
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3 Full Pack
- Datasheets
- 2SB1258
PNP - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Bulk Through Hole
2SB1258 Overview
DC current gain in this device equals 1000 @ 3A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 6mA, 3A.As a result, the part has a transition frequency of 100MHz.Product comes in TO-220F supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 6A volts.
2SB1258 Features
the DC current gain for this device is 1000 @ 3A 2V
the vce saturation(Max) is 1.5V @ 6mA, 3A
a transition frequency of 100MHz
the supplier device package of TO-220F
2SB1258 Applications
There are a lot of Sanken
2SB1258 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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