2SB1241TV2R
- Mfr.Part #
- 2SB1241TV2R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A ATV
- Stock
- 6,097
- In Stock :
- 6,097
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Max Collector Current :
- 3A
- Terminal Finish :
- TIN SILVER COPPER
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- -80V
- Published :
- 2009
- Package / Case :
- 3-SIP
- Voltage - Rated DC :
- -80V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Base Part Number :
- 2SB1241
- JESD-30 Code :
- R-PSIP-T3
- Packaging :
- Tape and Box (TB)
- Max Breakdown Voltage :
- 80V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 1V
- Current Rating :
- -1A
- Polarity/Channel Type :
- PNP
- hFE Min :
- 180
- Mount :
- Through Hole
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Current - Collector (Ic) (Max) :
- 1A
- Datasheets
- 2SB1241TV2R

PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP 3-SIP Tape & Box (TB) Through Hole
2SB1241TV2R Overview
This device has a DC current gain of 180 @ 100mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 80V volts can be used.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.A maximum collector current of 3A volts is possible.
2SB1241TV2R Features
the DC current gain for this device is 180 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
2SB1241TV2R Applications
There are a lot of ROHM Semiconductor
2SB1241TV2R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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