2SB1241TV2Q
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- Mfr.Part #
- 2SB1241TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A ATV
- Stock
- 45,188
- In Stock ：
- 45,188
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -80V
- Gain Bandwidth Product :
- 100MHz
- Mount :
- Through Hole
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -5V
- Max Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Packaging :
- Tape and Box (TB)
- Current - Collector (Ic) (Max) :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -80V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -400mV
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 80V
- Qualification Status :
- Not Qualified
- Published :
- 2006
- Max Collector Current :
- 3A
- Current Rating :
- -1A
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 1V
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Transistor Element Material :
- SILICON
- Base Part Number :
- 2SB1241
- hFE Min :
- 120
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 50V
- Package / Case :
- 3-SIP
- Terminal Finish :
- TIN SILVER COPPER
- JESD-30 Code :
- R-PSIP-T3
- Datasheets
- 2SB1241TV2Q
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP 3-SIP Tape & Box (TB) Through Hole
2SB1241TV2Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.As it features a collector emitter saturation voltage of -400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can be broken down at a voltage of 80V volts.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 3A volts.
2SB1241TV2Q Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
2SB1241TV2Q Applications
There are a lot of ROHM Semiconductor
2SB1241TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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