2SB1238TV2Q
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- Mfr.Part #
- 2SB1238TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.7A ATV
- Stock
- 38,090
- In Stock ：
- 38,090
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -700mA
- Frequency - Transition :
- 100MHz
- Transistor Type :
- PNP
- Max Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 10
- JESD-609 Code :
- e1
- Voltage - Rated DC :
- -80V
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- -80V
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 1W
- HTS Code :
- 8541.21.00.95
- Packaging :
- Tape and Box (TB)
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 400mV
- Operating Temperature :
- 150°C TJ
- Published :
- 2004
- Terminal Finish :
- TIN SILVER COPPER
- Max Breakdown Voltage :
- 80V
- Gain Bandwidth Product :
- 120MHz
- JESD-30 Code :
- R-PSIP-T3
- Number of Elements :
- 1
- hFE Min :
- 120
- Package / Case :
- 3-SIP
- Current - Collector (Ic) (Max) :
- 700mA
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Mount :
- Through Hole
- Base Part Number :
- 2SB1238
- Datasheets
- 2SB1238TV2Q
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP 3-SIP Tape & Box (TB) Through Hole
2SB1238TV2Q Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -700mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SB1238TV2Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -700mA
a transition frequency of 100MHz
2SB1238TV2Q Applications
There are a lot of ROHM Semiconductor
2SB1238TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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