2SB1236TV2Q
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- Mfr.Part #
- 2SB1236TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS PNP 120V 1.5A ATV
- Stock
- 20,891
- In Stock ：
- 20,891
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1.5A
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 100mA, 1A
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 120V
- Collector Base Voltage (VCBO) :
- -120V
- Voltage - Rated DC :
- -120V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Current - Collector (Ic) (Max) :
- 1.5A
- Collector Emitter Voltage (VCEO) :
- 2V
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 3-SIP
- Packaging :
- Tape and Box (TB)
- Gain Bandwidth Product :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- hFE Min :
- 120
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Type :
- PNP
- JESD-30 Code :
- R-PSIP-T3
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 50MHz
- Current Rating :
- -1.5A
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1W
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2004
- Terminal Finish :
- TIN SILVER COPPER
- Element Configuration :
- Single
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SB1236TV2Q
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP 3-SIP Tape & Box (TB) Through Hole
2SB1236TV2Q Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 1.5A volts.
2SB1236TV2Q Features
the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
2SB1236TV2Q Applications
There are a lot of ROHM Semiconductor
2SB1236TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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