2SB1216T-H

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

1999

Current - Collector Cutoff (Max) :

1μA ICBO

Mounting Type :

Through Hole

JESD-609 Code :

e6

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

Packaging :

Bulk

Number of Pins :

3

Transition Frequency :

130MHz

Pin Count :

3

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Configuration :

Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Collector Emitter Breakdown Voltage :

100V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Halogen Free :

Halogen Free

hFE Min :

70

Max Collector Current :

4A

Collector Emitter Voltage (VCEO) :

100V

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Transistor Application :

SWITCHING

Max Power Dissipation :

1W

Pbfree Code :

yes

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 5V

Emitter Base Voltage (VEBO) :

-6V

Collector Base Voltage (VCBO) :

120V

Base Part Number :

2SB1216

Power - Max :

1W

Mount :

Through Hole

Case Connection :

COLLECTOR

Frequency - Transition :

130MHz

Lead Free :

Lead Free

Transistor Type :

PNP

HTS Code :

8541.29.00.75

Terminal Position :

Single

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Lifecycle Status :

LIFETIME (Last Updated: 1 week ago)

Number of Terminations :

3