2SB1216T-E
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- Mfr.Part #
- 2SB1216T-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 4A TP
- Stock
- 139,150
- In Stock ：
- 139,150
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Supplier Device Package :
- TP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 1W
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 130MHz
- Datasheets
- 2SB1216T-E
PNP 150°C TJ 1μA ICBO TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SB1216T-E Overview
This device has a DC current gain of 200 @ 500mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TP.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.
2SB1216T-E Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the supplier device package of TP
2SB1216T-E Applications
There are a lot of Rochester Electronics, LLC
2SB1216T-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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