2SB1216S-TL-E

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Mfr.Part #
2SB1216S-TL-E
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 100V 4A TPFA
Stock
108
In Stock :
108

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
PNP
Collector Emitter Breakdown Voltage :
100V
Width :
5.5mm
Reach Compliance Code :
not_compliant
Collector Base Voltage (VCBO) :
120V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
Transistor Type :
PNP
Lead Free :
Lead Free
JESD-609 Code :
e6
Frequency :
180MHz
Power Dissipation :
1W
Height :
2.3mm
Transition Frequency :
130MHz
Pbfree Code :
yes
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Published :
2012
Number of Pins :
3
Surface Mount :
yes
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Terminal Form :
Gull wing
Length :
6.5mm
Max Collector Current :
4A
Transistor Application :
SWITCHING
Max Power Dissipation :
1W
Mounting Type :
Surface Mount
Collector Emitter Voltage (VCEO) :
100V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Number of Terminations :
2
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 500mA 5V
Pin Count :
3
Number of Elements :
1
Factory Lead Time :
2 Weeks
hFE Min :
70
Element Configuration :
Single
Collector Emitter Saturation Voltage :
-500mV
ECCN Code :
EAR99
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Frequency - Transition :
130MHz
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Packaging :
Tape and Reel (TR)
Current - Collector Cutoff (Max) :
1μA ICBO
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
6V
RoHS Status :
ROHS3 Compliant
Base Part Number :
2SB1216
Datasheets
2SB1216S-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1216S-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Base Part Number:2SB1216, 2SB1216S-TL-E pinout, 2SB1216S-TL-E datasheet PDF, 2SB1216S-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1216S-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1216S-TL-E


PNP 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

2SB1216S-TL-E Overview


In this device, the DC current gain is 140 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.130MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

2SB1216S-TL-E Features


the DC current gain for this device is 140 @ 500mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz


2SB1216S-TL-E Applications


There are a lot of ON Semiconductor
2SB1216S-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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