2SB1216S-TL-E
- Mfr.Part #
- 2SB1216S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 4A TPFA
- Stock
- 108
- In Stock :
- 108
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 100V
- Width :
- 5.5mm
- Reach Compliance Code :
- not_compliant
- Collector Base Voltage (VCBO) :
- 120V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- JESD-609 Code :
- e6
- Frequency :
- 180MHz
- Power Dissipation :
- 1W
- Height :
- 2.3mm
- Transition Frequency :
- 130MHz
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Published :
- 2012
- Number of Pins :
- 3
- Surface Mount :
- yes
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Terminal Form :
- Gull wing
- Length :
- 6.5mm
- Max Collector Current :
- 4A
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1W
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Number of Terminations :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 5V
- Pin Count :
- 3
- Number of Elements :
- 1
- Factory Lead Time :
- 2 Weeks
- hFE Min :
- 70
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -500mV
- ECCN Code :
- EAR99
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Frequency - Transition :
- 130MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- 2SB1216
- Datasheets
- 2SB1216S-TL-E

PNP 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1216S-TL-E Overview
In this device, the DC current gain is 140 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.130MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2SB1216S-TL-E Features
the DC current gain for this device is 140 @ 500mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
2SB1216S-TL-E Applications
There are a lot of ON Semiconductor
2SB1216S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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