2SB1216S-H

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Halogen Free :

Halogen Free

Base Part Number :

2SB1216

hFE Min :

70

Current - Collector Cutoff (Max) :

1μA ICBO

Max Power Dissipation :

1W

Packaging :

Bulk

Collector Base Voltage (VCBO) :

120V

Emitter Base Voltage (VEBO) :

-6V

Factory Lead Time :

31 Weeks

Collector Emitter Voltage (VCEO) :

100V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

JESD-609 Code :

e6

Polarity/Channel Type :

PNP

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Case Connection :

COLLECTOR

Number of Elements :

1

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 500mA 5V

Published :

2012

Transition Frequency :

130MHz

Pbfree Code :

yes

Operating Temperature :

150°C TJ

HTS Code :

8541.29.00.75

Collector Emitter Breakdown Voltage :

100V

Max Collector Current :

4A

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Surface Mount :

No

Number of Terminations :

3

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Pin Count :

3

Power - Max :

1W

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

RoHS Status :

RoHS Compliant

Frequency - Transition :

130MHz

Terminal Position :

Single

Number of Pins :

3

Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A