2SB1216S-E

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Mfr.Part #
2SB1216S-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS PNP 100V 4A TP
Stock
2,590
In Stock :
2,590

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Pins :
3
Max Collector Current :
4A
ECCN Code :
EAR99
Pin Count :
3
hFE Min :
70
Base Part Number :
2SB1216
Factory Lead Time :
2 Weeks
Packaging :
Bulk
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Pbfree Code :
yes
Published :
2012
Terminal Position :
Single
Operating Temperature :
150°C TJ
Collector Emitter Voltage (VCEO) :
100V
Transition Frequency :
130MHz
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Number of Elements :
1
Frequency - Transition :
130MHz
Radiation Hardening :
No
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Collector Emitter Breakdown Voltage :
100V
Configuration :
Single
Number of Terminations :
3
Emitter Base Voltage (VEBO) :
-6V
HTS Code :
8541.29.00.75
Case Connection :
COLLECTOR
Polarity/Channel Type :
PNP
Power - Max :
1W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 500mA 5V
Transistor Type :
PNP
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
JESD-609 Code :
e6
Lead Free :
Lead Free
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Surface Mount :
No
Collector Base Voltage (VCBO) :
120V
Max Power Dissipation :
1W
Current - Collector Cutoff (Max) :
1μA ICBO
Datasheets
2SB1216S-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1216S-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:2SB1216, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, 2SB1216S-E pinout, 2SB1216S-E datasheet PDF, 2SB1216S-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1216S-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1216S-E


PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SB1216S-E Overview


This device has a DC current gain of 140 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.As you can see, the part has a transition frequency of 130MHz.A maximum collector current of 4A volts is possible.

2SB1216S-E Features


the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz


2SB1216S-E Applications


There are a lot of ON Semiconductor
2SB1216S-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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