2SB1216S-E
- Mfr.Part #
- 2SB1216S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 4A TP
- Stock
- 2,590
- In Stock :
- 2,590
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Max Collector Current :
- 4A
- ECCN Code :
- EAR99
- Pin Count :
- 3
- hFE Min :
- 70
- Base Part Number :
- 2SB1216
- Factory Lead Time :
- 2 Weeks
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Published :
- 2012
- Terminal Position :
- Single
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 100V
- Transition Frequency :
- 130MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Frequency - Transition :
- 130MHz
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Collector Emitter Breakdown Voltage :
- 100V
- Configuration :
- Single
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- -6V
- HTS Code :
- 8541.29.00.75
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Power - Max :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 5V
- Transistor Type :
- PNP
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- JESD-609 Code :
- e6
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 120V
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Datasheets
- 2SB1216S-E

PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SB1216S-E Overview
This device has a DC current gain of 140 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.As you can see, the part has a transition frequency of 130MHz.A maximum collector current of 4A volts is possible.
2SB1216S-E Features
the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz
2SB1216S-E Applications
There are a lot of ON Semiconductor
2SB1216S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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