2SB1215T-TL-E
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- Mfr.Part #
- 2SB1215T-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A TP-FA
- Stock
- 46,927
- In Stock ：
- 46,927
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- 2-TP-FA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 150mA, 1.5A
- Current - Collector (Ic) (Max) :
- 3A
- Operating Temperature :
- 150°C TJ
- Power - Max :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 130MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Datasheets
- 2SB1215T-TL-E
PNP 150°C TJ 1μA ICBO TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1215T-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.When VCE saturation is 500mV @ 150mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Supplier package 2-TP-FA contains the product.The device has a 100V maximal voltage - Collector Emitter Breakdown.
2SB1215T-TL-E Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 500mV @ 150mA, 1.5A
the supplier device package of 2-TP-FA
2SB1215T-TL-E Applications
There are a lot of Rochester Electronics, LLC
2SB1215T-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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