2SB1205S-E

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Mfr.Part #
2SB1205S-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS PNP 20V 5A TP
Stock
15,992
In Stock :
15,992

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency - Transition :
320MHz
Mounting Type :
Through Hole
Polarity/Channel Type :
PNP
Packaging :
Bulk
Emitter Base Voltage (VEBO) :
-5V
Configuration :
Single
Published :
2013
JESD-609 Code :
e6
Max Power Dissipation :
1W
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 500mA 2V
Factory Lead Time :
2 Weeks
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
5A
Base Part Number :
2SB1205
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Current - Collector Cutoff (Max) :
500nA ICBO
ECCN Code :
EAR99
Transistor Type :
PNP
Power - Max :
1W
Vce Saturation (Max) @ Ib, Ic :
500mV @ 60mA, 3A
Collector Emitter Breakdown Voltage :
20V
Operating Temperature :
150°C TJ
hFE Min :
140
Collector Emitter Voltage (VCEO) :
-500mV
Datasheets
2SB1205S-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1205S-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Base Part Number:2SB1205, Number of Pins:3, Operating Temperature:150°C TJ, 2SB1205S-E pinout, 2SB1205S-E datasheet PDF, 2SB1205S-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1205S-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1205S-E


PNP 150°C TJ 500nA ICBO PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SB1205S-E Overview


In this device, the DC current gain is 140 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 60mA, 3A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

2SB1205S-E Features


the DC current gain for this device is 140 @ 500mA 2V
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at -5V


2SB1205S-E Applications


There are a lot of ON Semiconductor
2SB1205S-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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