2SB1204T-TL-E
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- Mfr.Part #
- 2SB1204T-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 50V 8A TPFA
- Stock
- 8,159
- In Stock ：
- 8,159
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 60V
- hFE Min :
- 200
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- JESD-609 Code :
- e6
- Published :
- 2011
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 4A
- Pbfree Code :
- yes
- Base Part Number :
- 2SB1204
- Number of Pins :
- 3
- Max Collector Current :
- 8A
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Frequency - Transition :
- 130MHz
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- Reach Compliance Code :
- not_compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -550mV
- Length :
- 6.5mm
- Lead Free :
- Lead Free
- Width :
- 2.3mm
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Voltage (VCEO) :
- -500mV
- Emitter Base Voltage (VEBO) :
- -6V
- Max Power Dissipation :
- 1W
- Max Frequency :
- 130MHz
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Surface Mount :
- yes
- Pin Count :
- 3
- Height :
- 5.5mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Datasheets
- 2SB1204T-TL-E
PNP 150°C TJ 1μA ICBO PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1204T-TL-E Overview
DC current gain in this device equals 200 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -550mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 4A.An emitter's base voltage can be kept at -6V to gain high efficiency.In extreme cases, the collector current can be as low as 8A volts.
2SB1204T-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -550mV
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at -6V
2SB1204T-TL-E Applications
There are a lot of ON Semiconductor
2SB1204T-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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