2SB1204T-E

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Mfr.Part #
2SB1204T-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS PNP 50V 8A TP
Stock
1,263
In Stock :
1,263

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Current - Collector Cutoff (Max) :
1μA ICBO
Factory Lead Time :
2 Weeks
JESD-609 Code :
e6
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Packaging :
Bulk
Collector Emitter Breakdown Voltage :
50V
Mounting Type :
Through Hole
Configuration :
Single
Pbfree Code :
yes
Surface Mount :
No
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 4A
Transistor Type :
PNP
Emitter Base Voltage (VEBO) :
-6V
Frequency - Transition :
130MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
PNP
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Power - Max :
1W
hFE Min :
200
Pin Count :
3
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Max Collector Current :
8A
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
60V
Operating Temperature :
150°C TJ
Published :
2011
Max Power Dissipation :
1W
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Reach Compliance Code :
not_compliant
Collector Emitter Voltage (VCEO) :
-500mV
Base Part Number :
2SB1204
Datasheets
2SB1204T-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1204T-E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:150°C TJ, Base Part Number:2SB1204, 2SB1204T-E pinout, 2SB1204T-E datasheet PDF, 2SB1204T-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1204T-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1204T-E


PNP 150°C TJ 1μA ICBO PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SB1204T-E Overview


DC current gain in this device equals 200 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 4A.An emitter's base voltage can be kept at -6V to gain high efficiency.In extreme cases, the collector current can be as low as 8A volts.

2SB1204T-E Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at -6V


2SB1204T-E Applications


There are a lot of ON Semiconductor
2SB1204T-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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