2SB1203T-H-TL-E
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- Mfr.Part #
- 2SB1203T-H-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 50V 5A TPFA
- Stock
- 28,619
- In Stock ：
- 28,619
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2011
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Voltage (VCEO) :
- 550mV
- Max Collector Current :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 150mA, 3A
- Power - Max :
- 1W
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 130MHz
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 50V
- RoHS Status :
- RoHS Compliant
- Datasheets
- 2SB1203T-H-TL-E
PNP 150°C TJ 1μA ICBO TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1203T-H-TL-E Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 150mA, 3A.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
2SB1203T-H-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 550mV @ 150mA, 3A
2SB1203T-H-TL-E Applications
There are a lot of ON Semiconductor
2SB1203T-H-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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