2SB1203T-H
- Mfr.Part #
- 2SB1203T-H
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 5A TP
- Stock
- 45,212
- In Stock :
- 45,212
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Packaging :
- Bulk
- Terminal Position :
- Single
- Max Power Dissipation :
- 1W
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Halogen Free :
- Halogen Free
- Transition Frequency :
- 130MHz
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Frequency - Transition :
- 130MHz
- Pbfree Code :
- yes
- Configuration :
- Single
- Number of Pins :
- 3
- Published :
- 2012
- Surface Mount :
- No
- Emitter Base Voltage (VEBO) :
- -6V
- Lead Free :
- Lead Free
- Base Part Number :
- 2SB1203
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Power - Max :
- 1W
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e6
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 70
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 150mA, 3A
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Factory Lead Time :
- 30 Weeks
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 5A
- Datasheets
- 2SB1203T-H

PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SB1203T-H Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 550mV @ 150mA, 3A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.130MHz is present in the transition frequency.Maximum collector currents can be below 5A volts.
2SB1203T-H Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 550mV @ 150mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz
2SB1203T-H Applications
There are a lot of ON Semiconductor
2SB1203T-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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