2SB1203T-H

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Mfr.Part #
2SB1203T-H
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS PNP 50V 5A TP
Stock
45,212
In Stock :
45,212

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Packaging :
Bulk
Terminal Position :
Single
Max Power Dissipation :
1W
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Halogen Free :
Halogen Free
Transition Frequency :
130MHz
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
50V
Frequency - Transition :
130MHz
Pbfree Code :
yes
Configuration :
Single
Number of Pins :
3
Published :
2012
Surface Mount :
No
Emitter Base Voltage (VEBO) :
-6V
Lead Free :
Lead Free
Base Part Number :
2SB1203
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Power - Max :
1W
Collector Base Voltage (VCBO) :
60V
JESD-609 Code :
e6
RoHS Status :
RoHS Compliant
hFE Min :
70
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
550mV @ 150mA, 3A
Transistor Type :
PNP
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
50V
Current - Collector Cutoff (Max) :
1μA ICBO
Factory Lead Time :
30 Weeks
Case Connection :
COLLECTOR
Number of Elements :
1
Operating Temperature :
150°C TJ
Max Collector Current :
5A
Datasheets
2SB1203T-H
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1203T-H from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Terminations:3, Number of Pins:3, Base Part Number:2SB1203, Mounting Type:Through Hole, Operating Temperature:150°C TJ, 2SB1203T-H pinout, 2SB1203T-H datasheet PDF, 2SB1203T-H amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1203T-H ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1203T-H


PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SB1203T-H Overview


In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 550mV @ 150mA, 3A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.130MHz is present in the transition frequency.Maximum collector currents can be below 5A volts.

2SB1203T-H Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 550mV @ 150mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz


2SB1203T-H Applications


There are a lot of ON Semiconductor
2SB1203T-H applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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