2SB1203S-H-TL-E
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- Mfr.Part #
- 2SB1203S-H-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 50V 5A TPFA
- Stock
- 17,821
- In Stock ：
- 17,821
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 2V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 550mV
- Frequency - Transition :
- 130MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Power - Max :
- 1W
- Max Collector Current :
- 5A
- Published :
- 2010
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 150mA, 3A
- Max Power Dissipation :
- 1W
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 50V
- RoHS Status :
- RoHS Compliant
- Datasheets
- 2SB1203S-H-TL-E
PNP 150°C TJ 1μA ICBO TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1203S-H-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 140 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 550mV @ 150mA, 3A.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
2SB1203S-H-TL-E Features
the DC current gain for this device is 140 @ 500mA 2V
the vce saturation(Max) is 550mV @ 150mA, 3A
2SB1203S-H-TL-E Applications
There are a lot of ON Semiconductor
2SB1203S-H-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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