2SB1203S-E

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Mfr.Part #
2SB1203S-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS PNP 50V 5A TP
Stock
30,702
In Stock :
30,702

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
1W
Operating Temperature :
150°C TJ
Packaging :
Bulk
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Mounting Type :
Through Hole
Max Collector Current :
5A
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Vce Saturation (Max) @ Ib, Ic :
550mV @ 150mA, 3A
Frequency - Transition :
130MHz
Transistor Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
50V
Lead Free :
Lead Free
Terminal Finish :
Tin/Bismuth (Sn/Bi)
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 500mA 2V
Pbfree Code :
yes
Published :
1999
Base Part Number :
2SB1203
hFE Min :
70
Current - Collector Cutoff (Max) :
1μA ICBO
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
-6V
JESD-609 Code :
e6
Number of Pins :
3
Power - Max :
1W
Collector Base Voltage (VCBO) :
60V
Factory Lead Time :
2 Weeks
Reach Compliance Code :
not_compliant
Collector Emitter Voltage (VCEO) :
50V
Pin Count :
3
Datasheets
2SB1203S-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1203S-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Base Part Number:2SB1203, Number of Pins:3, 2SB1203S-E pinout, 2SB1203S-E datasheet PDF, 2SB1203S-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1203S-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1203S-E


PNP 150°C TJ 1μA ICBO TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SB1203S-E Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 140 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 550mV @ 150mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.During maximum operation, collector current can be as low as 5A volts.

2SB1203S-E Features


the DC current gain for this device is 140 @ 500mA 2V
the vce saturation(Max) is 550mV @ 150mA, 3A
the emitter base voltage is kept at -6V


2SB1203S-E Applications


There are a lot of ON Semiconductor
2SB1203S-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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