2SB1202T-TL-E
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- Mfr.Part #
- 2SB1202T-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A TPFA
- Stock
- 61,180
- In Stock ：
- 61,180
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e6
- Width :
- 5.5mm
- Reach Compliance Code :
- not_compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Base Part Number :
- 2SB1202
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.5mm
- Emitter Base Voltage (VEBO) :
- -6V
- Collector Emitter Saturation Voltage :
- -700μV
- Gain Bandwidth Product :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1W
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- Height :
- 2.3mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Number of Elements :
- 1
- Max Collector Current :
- 3A
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Base Voltage (VCBO) :
- -60V
- Operating Temperature :
- 150°C TJ
- Frequency :
- 150MHz
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Polarity/Channel Type :
- PNP
- Published :
- 2004
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 2A
- Datasheets
- 2SB1202T-TL-E
PNP 150°C TJ 1μA ICBO 1 Elements PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1202T-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -700μV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 100mA, 2A.The emitter base voltage can be kept at -6V for high efficiency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SB1202T-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -700μV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
2SB1202T-TL-E Applications
There are a lot of ON Semiconductor
2SB1202T-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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