2SB1202S-TL-E
- Mfr.Part #
- 2SB1202S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A TP-FA
- Stock
- 25,331
- In Stock :
- 25,331
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -700mV
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 2V
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 2A
- Published :
- 2004
- Lead Free :
- Lead Free
- Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 150MHz
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e6
- Number of Pins :
- 3
- Length :
- 6.5mm
- Collector Emitter Breakdown Voltage :
- 50V
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Polarity/Channel Type :
- PNP
- Height :
- 2.3mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Base Part Number :
- 2SB1202
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- 6V
- Width :
- 5.5mm
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Reach Compliance Code :
- not_compliant
- Datasheets
- 2SB1202S-TL-E

PNP 150°C TJ 1μA ICBO 1 Elements PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1202S-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 140 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 3A volts.
2SB1202S-TL-E Features
the DC current gain for this device is 140 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SB1202S-TL-E Applications
There are a lot of ON Semiconductor
2SB1202S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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