2SB1202S-E

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Mfr.Part #
2SB1202S-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS PNP 50V 3A TP
Stock
1,484
In Stock :
1,484

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
1W
Configuration :
Single
Current - Collector Cutoff (Max) :
1μA ICBO
Base Part Number :
2SB1202
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 100mA 2V
Pin Count :
3
Collector Emitter Voltage (VCEO) :
50V
Frequency - Transition :
150MHz
Collector Emitter Breakdown Voltage :
50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
JESD-609 Code :
e6
Operating Temperature :
150°C TJ
ECCN Code :
EAR99
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
hFE Min :
100
Current - Collector (Ic) (Max) :
3A
Published :
2000
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Pbfree Code :
yes
Factory Lead Time :
2 Weeks
Max Collector Current :
5A
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
60V
Polarity/Channel Type :
PNP
Max Breakdown Voltage :
50V
Packaging :
Bulk
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
700mV @ 100mA, 2A
Number of Pins :
3
Emitter Base Voltage (VEBO) :
-6V
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1202S-E from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2SB1202, Operating Temperature:150°C TJ, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Number of Pins:3, 2SB1202S-E pinout, 2SB1202S-E datasheet PDF, 2SB1202S-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1202S-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1202S-E


PNP 150°C TJ 1μA ICBO PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SB1202S-E Overview


This device has a DC current gain of 140 @ 100mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -6V to achieve high efficiency.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 5A volts.

2SB1202S-E Features


the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V


2SB1202S-E Applications


There are a lot of ON Semiconductor
2SB1202S-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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