2SB1201T-TL-E

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Mfr.Part #
2SB1201T-TL-E
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 50V 2A TP-FA
Stock
55,866
In Stock :
55,866

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
2A
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 2V
Pin Count :
3
Power Dissipation :
800mW
Frequency :
150MHz
Operating Temperature :
150°C TJ
Emitter Base Voltage (VEBO) :
6V
Published :
2012
Collector Emitter Breakdown Voltage :
50V
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Factory Lead Time :
2 Weeks
Base Part Number :
2SB1201
Max Power Dissipation :
800mW
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Number of Pins :
3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 1A
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Transistor Type :
PNP
JESD-609 Code :
e6
Collector Base Voltage (VCBO) :
60V
Collector Emitter Voltage (VCEO) :
50V
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Current - Collector (Ic) (Max) :
2A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
hFE Min :
100
Pbfree Code :
yes
Datasheets
2SB1201T-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1201T-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Base Part Number:2SB1201, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, 2SB1201T-TL-E pinout, 2SB1201T-TL-E datasheet PDF, 2SB1201T-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1201T-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1201T-TL-E


PNP 150°C TJ 100nA ICBO 1 Elements TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

2SB1201T-TL-E Overview


DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.In extreme cases, the collector current can be as low as 2A volts.

2SB1201T-TL-E Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 700mV @ 50mA, 1A
the emitter base voltage is kept at 6V


2SB1201T-TL-E Applications


There are a lot of ON Semiconductor
2SB1201T-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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