2SB1201T-E
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- Mfr.Part #
- 2SB1201T-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A TP
- Stock
- 11,246
- In Stock ：
- 11,246
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 800mW
- Packaging :
- Bulk
- Supplier Device Package :
- TP
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 1A
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 2A
- RoHS Status :
- Non-RoHS Compliant
- Frequency - Transition :
- 150MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Mounting Type :
- Through Hole
- Datasheets
- 2SB1201T-E
PNP 150°C TJ 100nA ICBO TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SB1201T-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 1A.TP is the supplier device package for this product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
2SB1201T-E Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 700mV @ 50mA, 1A
the supplier device package of TP
2SB1201T-E Applications
There are a lot of Rochester Electronics, LLC
2SB1201T-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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