2SB1201S-E

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Mfr.Part #
2SB1201S-E
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 50V 2A TP-FA
Stock
10,802
In Stock :
10,802

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
100
Max Collector Current :
2A
Terminal Finish :
Tin/Bismuth (Sn/Bi)
JESD-609 Code :
e6
Emitter Base Voltage (VEBO) :
-6V
ECCN Code :
EAR99
Base Part Number :
2SB1201
Mounting Type :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 1A
RoHS Status :
ROHS3 Compliant
Power - Max :
800mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 100mA 2V
Collector Emitter Breakdown Voltage :
50V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins :
3
Pin Count :
3
Operating Temperature :
150°C TJ
Pbfree Code :
yes
Published :
2012
Factory Lead Time :
2 Weeks
Collector Base Voltage (VCBO) :
60V
Packaging :
Bulk
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Max Power Dissipation :
800mW
Collector Emitter Voltage (VCEO) :
50V
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Type :
PNP
Lead Free :
Lead Free
Frequency - Transition :
150MHz
Datasheets
2SB1201S-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1201S-E from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2SB1201, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Operating Temperature:150°C TJ, 2SB1201S-E pinout, 2SB1201S-E datasheet PDF, 2SB1201S-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1201S-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1201S-E


PNP 150°C TJ 100nA ICBO TO-252-3, DPak (2 Leads + Tab), SC-63 Bulk Surface Mount

2SB1201S-E Overview


This device has a DC current gain of 140 @ 100mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 700mV @ 50mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.A maximum collector current of 2A volts is possible.

2SB1201S-E Features


the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 700mV @ 50mA, 1A
the emitter base voltage is kept at -6V


2SB1201S-E Applications


There are a lot of ON Semiconductor
2SB1201S-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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