2SB1198KT146R
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- Mfr.Part #
- 2SB1198KT146R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SMT3
- Stock
- 33,741
- In Stock ：
- 33,741
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 180MHz
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Contact Plating :
- Copper, Silver, Tin
- VCEsat-Max :
- 0.5 V
- Collector Base Voltage (VCBO) :
- -80V
- Emitter Base Voltage (VEBO) :
- -5V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -80V
- Published :
- 1998
- Radiation Hardening :
- No
- hFE Min :
- 120
- Max Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- HTS Code :
- 8541.21.00.75
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Continuous Collector Current :
- -500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 80V
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Current Rating :
- -500mA
- Base Part Number :
- 2SB1198
- Power - Max :
- 200mW
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 80V
- Transition Frequency :
- 180MHz
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Factory Lead Time :
- 13 Weeks
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 500mV
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- -200mV
- Mount :
- Surface Mount
- Datasheets
- 2SB1198KT146R
2SB1198KT146R Documents
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SB1198KT146R Overview
This device has a DC current gain of 180 @ 100mA 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -200mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 180MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts is possible.
2SB1198KT146R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 180MHz
2SB1198KT146R Applications
There are a lot of ROHM Semiconductor
2SB1198KT146R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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