2SB1197KT146Q
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- Mfr.Part #
- 2SB1197KT146Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.8A SMT3
- Stock
- 110
- In Stock ：
- 110
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Collector Base Voltage (VCBO) :
- -40V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Base Part Number :
- 2SB1197
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- HTS Code :
- 8541.21.00.75
- Current Rating :
- -800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Contact Plating :
- Copper, Silver, Tin
- Polarity/Channel Type :
- PNP
- hFE Min :
- 120
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- Power - Max :
- 200mW
- Published :
- 2008
- Collector Emitter Voltage (VCEO) :
- 500mV
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Emitter Base Voltage (VEBO) :
- -5V
- VCEsat-Max :
- 0.5 V
- Gain Bandwidth Product :
- 200MHz
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 800mA
- Number of Terminations :
- 3
- Max Power Dissipation :
- 200mW
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 200MHz
- Max Breakdown Voltage :
- 32V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Continuous Collector Current :
- -800mA
- Voltage - Rated DC :
- -32V
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 32V
- Number of Pins :
- 3
- Pin Count :
- 3
- Datasheets
- 2SB1197KT146Q
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SB1197KT146Q Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -800mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -800mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 32V volts before it breaks down.A maximum collector current of 800mA volts can be achieved.
2SB1197KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
2SB1197KT146Q Applications
There are a lot of ROHM Semiconductor
2SB1197KT146Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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