2SB1189T100R
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- Mfr.Part #
- 2SB1189T100R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.7A MPT3
- Stock
- 27
- In Stock ：
- 27
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 400mV
- Max Collector Current :
- 700mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- -80V
- Max Power Dissipation :
- 2W
- Collector Emitter Saturation Voltage :
- -200mV
- Continuous Collector Current :
- -700mA
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Base Part Number :
- 2SB1189
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 80V
- Published :
- 1998
- JESD-609 Code :
- e2
- Current Rating :
- -700mA
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Lead Free :
- Lead Free
- Power - Max :
- 2W
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-243AA
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- Terminal Form :
- Flat
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Max Breakdown Voltage :
- 80V
- Transition Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 120
- Radiation Hardening :
- No
- Contact Plating :
- Copper, Tin
- Voltage - Rated DC :
- -80V
- Terminal Finish :
- TIN COPPER
- Pbfree Code :
- yes
- Datasheets
- 2SB1189T100R
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1189T100R Overview
DC current gain in this device equals 180 @ 100mA 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -700mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -700mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 700mA volts.
2SB1189T100R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -700mA
a transition frequency of 100MHz
2SB1189T100R Applications
There are a lot of ROHM Semiconductor
2SB1189T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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