2SB1188T100R
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- Mfr.Part #
- 2SB1188T100R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 32V 2A MPT3
- Stock
- 1,621
- In Stock ：
- 1,621
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 500mW
- hFE Min :
- 82
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 32V
- Contact Plating :
- Copper, Tin
- Gain Bandwidth Product :
- 100MHz
- Lead Free :
- Lead Free
- Terminal Finish :
- TIN COPPER
- Terminal Form :
- Flat
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 3V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Voltage - Rated DC :
- -32V
- Mount :
- Surface Mount
- Package / Case :
- TO-243AA
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Emitter Base Voltage (VEBO) :
- -5V
- Published :
- 1997
- VCEsat-Max :
- 0.8 V
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Element Material :
- SILICON
- Base Part Number :
- 2SB1188
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 40V
- Max Collector Current :
- 2A
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Current Rating :
- -2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e2
- Collector Emitter Voltage (VCEO) :
- 32V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- -32V
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2W
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Datasheets
- 2SB1188T100R
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1188T100R Overview
In this device, the DC current gain is 180 @ 500mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 200mA, 2A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).100MHz is present in the transition frequency.An input voltage of 32V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
2SB1188T100R Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz
2SB1188T100R Applications
There are a lot of ROHM Semiconductor
2SB1188T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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