2SB1186AE
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- Mfr.Part #
- 2SB1186AE
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A TO220FP
- Stock
- 23,569
- In Stock ：
- 23,569
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 100mA, 1A
- JESD-30 Code :
- R-PSFM-T3
- Max Power Dissipation :
- 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 1A 5V
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 1.5A
- Mount :
- Through Hole
- Polarity/Channel Type :
- PNP
- HTS Code :
- 8541.29.00.75
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 2V
- Reach Compliance Code :
- Unknown
- Published :
- 1998
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Power - Max :
- 2W
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Transition Frequency :
- 50MHz
- Transistor Type :
- PNP
- Frequency - Transition :
- 50MHz
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Packaging :
- Bulk
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -160V
- Current Rating :
- -1.5A
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 160V
- Configuration :
- Single
- Package / Case :
- TO-220-3 Full Pack
- Number of Elements :
- 1
- Datasheets
- 2SB1186AE
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Bulk Through Hole
2SB1186AE Overview
In this device, the DC current gain is 60 @ 1A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 100mA, 1A.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
2SB1186AE Features
the DC current gain for this device is 60 @ 1A 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the current rating of this device is -1.5A
a transition frequency of 50MHz
2SB1186AE Applications
There are a lot of ROHM Semiconductor
2SB1186AE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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