2SB1184TLQ
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- Mfr.Part #
- 2SB1184TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A CPT3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Continuous Collector Current :
- -3A
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Transition Frequency :
- 70MHz
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Radiation Hardening :
- No
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- hFE Min :
- 82
- Max Power Dissipation :
- 1W
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Voltage (VCEO) :
- 50V
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Copper, Tin
- Mounting Type :
- Surface Mount
- Current Rating :
- -3A
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e2
- Voltage - Rated DC :
- -60V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Frequency :
- 70MHz
- Max Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 70MHz
- Max Collector Current :
- 3A
- Time@Peak Reflow Temperature-Max (s) :
- 10
- JESD-30 Code :
- R-PSSO-G2
- Base Part Number :
- 2SB1184
- Pin Count :
- 3
- Published :
- 2004
- Datasheets
- 2SB1184TLQ
PNP 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1184TLQ Overview
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -3A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 70MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 3A volts is possible.
2SB1184TLQ Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 70MHz
2SB1184TLQ Applications
There are a lot of ROHM Semiconductor
2SB1184TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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