2SB1182TLR
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- Mfr.Part #
- 2SB1182TLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 32V 2A CPT3
- Stock
- 6,402
- In Stock ：
- 6,402
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Collector Emitter Voltage (VCEO) :
- 32V
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- -2A
- Number of Terminations :
- 2
- Power - Max :
- 10W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- -32V
- hFE Min :
- 180
- Pin Count :
- 3
- Pbfree Code :
- yes
- Contact Plating :
- Copper, Tin
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- -32V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Published :
- 2004
- Max Breakdown Voltage :
- 32V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- Base Part Number :
- 2SB1182
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 3V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- JESD-609 Code :
- e2
- Collector Emitter Breakdown Voltage :
- 32V
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- Current Rating :
- -2A
- Max Power Dissipation :
- 10W
- Datasheets
- 2SB1182TLR
PNP 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1182TLR Overview
This device has a DC current gain of 180 @ 500mA 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -2A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -2A.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 32V volts.The maximum collector current is 2A volts.
2SB1182TLR Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
2SB1182TLR Applications
There are a lot of ROHM Semiconductor
2SB1182TLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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