2SB1182TLQ
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- Mfr.Part #
- 2SB1182TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 32V 2A CPT3
- Stock
- 2,541
- In Stock ：
- 2,541
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Max Collector Current :
- 2A
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Published :
- 1998
- Max Power Dissipation :
- 10W
- Gain Bandwidth Product :
- 100MHz
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 32V
- JESD-609 Code :
- e2
- Current Rating :
- -2A
- Collector Emitter Voltage (VCEO) :
- 800mV
- Termination :
- SMD/SMT
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Transistor Type :
- PNP
- Continuous Collector Current :
- -2A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Copper, Tin
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 32V
- hFE Min :
- 82
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Form :
- Gull wing
- Power - Max :
- 10W
- Collector Base Voltage (VCBO) :
- -40V
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -32V
- Base Part Number :
- 2SB1182
- Number of Pins :
- 3
- Power Dissipation :
- 1W
- Datasheets
- 2SB1182TLQ
2SB1182TLQ Documents
PNP 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1182TLQ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 200mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 32V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2SB1182TLQ Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz
2SB1182TLQ Applications
There are a lot of ROHM Semiconductor
2SB1182TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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